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Microwave image of 3C353 galaxy at 8.4 GHz (3.6 cm). The overall linear size of the radio structure is 120 Kpc. Microwaves are electromagnetic waves with a wavelength longer than infrared light, but shorter than radio waves.
Microwaves, also known as Super High Frequency (SHF) signals, have wavelengths approximately in the range of 30 cm (1 GHz) to 1 mm (300 GHz). However, the boundaries between far infrared light, microwaves, and ultra-high-frequency radio waves are fairly arbitrary and are used variously between different fields of study. The existence of electromagnetic waves, of which microwaves are part of the higher frequency spectrum, was predicted by James Clerk Maxwell in 1864 from his famous Maxwell's equations. In 1888, Heinrich Hertz was the first to demonstrate the existence of electromagnetic waves by building apparatus to produce radio waves.
Note: above 300 GHz, the absorption of electromagnetic radiation by Earth's atmosphere is so great that the atmosphere is effectively opaque to higher frequencies of electromagnetic radiation, until the atmosphere becomes transparent again in the so-called infrared and optical window frequency ranges.
Microwaves can be generated by a variety of means, generally divided into two categories: solid state devices and vacuum-tube based devices. Solid state microwave devices are based on semiconductors such as silicon or gallium arsenide, and include field-effect transistors (FET's), bipolar junction transistorA Bipolar Junction Transistor (BJT), is a type of transistor, an amplifying or switching device constructed of doped semiconductor. A bipolar transistor is a sandwich of differently doped sections, either NPN or PNP. The center section is called the bases (BJT's), Gunn diode s, and Impatt diode s. Specialized versions of standard transistors have been developed for higher speed which are commonly used in microwave applications. Microwave variants of BJT's include the Heterojunction Bipolar Transistor (HBT), and microwave variants of FET's include the MESFETMESFET stands for Metal-Semiconductor Field Effect Transistor''. It is quite similar to a JFET in construction and terminology. The difference is that instead of a using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used. MESFETs, the HEMTHEMT stands for High Electron Mobility Transistor . A HEMT is a Field effect transistor with a junction between two materials with different band gaps (i. a heterojunction) as the channel instead of an n-doped region. A commonly used combination is GaAs w (also known as HFET), and LDMOS transistor.
Vacuum tubeIn electronics, a vacuum tube (American English) or thermionic) valve (British English) is a device generally used to amplify a signal. Once used in most electronic devices, vacuum tubes are now used only in specialized applications. For most purposes, th based devices operate on the ballistic motion of electrons in a vacuum under the influence of controlling electric or magnetic fields, and include the magnetronA magnetron is a high-powered vacuum tube that generates coherent microwaves. Construction and Operation A magnetron consists of a hot filament ( cathode) kept at or pulsed to a high negative potential by a high voltage direct current power supply. The ca, klystronA klystron is a specialized vacuum tube (evacuated electron tube) called a linear-beam tube. Klystrons are used as an oscillator or amplifier at microwave and radio frequencies to produce both low power reference signals for superheterodyne radar receiver, travelling wave tube (TWT), and gyrotron .